Invention Grant
- Patent Title: Substrate processing method for depositing a barrier layer to prevent photoresist poisoning
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Application No.: US15628739Application Date: 2017-06-21
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Publication No.: US10109476B2Publication Date: 2018-10-23
- Inventor: David Cheung , Ilia Kalinovski
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: LAM RESEARCH CORPORATION
- Current Assignee: LAM RESEARCH CORPORATION
- Current Assignee Address: US CA Fremont
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/3105 ; H01L21/311 ; C07F7/10

Abstract:
A method for depositing a barrier layer includes a) arranging a substrate including a nitride layer in a processing chamber; b) setting a process temperature in the processing chamber to a predetermined process temperature range; c) setting a process pressure in the processing chamber to a predetermined process pressure range; d) supplying at least one of a gas and a vapor including an organosilane precursor species; and e) depositing a barrier layer on the nitride layer. The barrier layer reduces diffusion of nitrogen-containing groups in the nitride layer into a photoresist layer that is subsequently deposited on the nitride layer.
Public/Granted literature
- US20180005819A1 SUBSTRATE PROCESSING METHOD FOR DEPOSITING A BARRIER LAYER TO PREVENT PHOTORESIST POISONING Public/Granted day:2018-01-04
Information query
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