Invention Grant
- Patent Title: Method for treating surface of semiconductor layer, semiconductor substrate, method for making epitaxial substrate
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Application No.: US15616562Application Date: 2017-06-07
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Publication No.: US10109482B2Publication Date: 2018-10-23
- Inventor: Tadashi Watanabe
- Applicant: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Applicant Address: JP Yokohama-shi
- Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Current Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Current Assignee Address: JP Yokohama-shi
- Agency: Venable LLP
- Agent Michael A. Sartori; Kerri M. Patterson
- Priority: JP2013-264346 20131220
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/44 ; C23C16/56 ; H01L21/30 ; H01L29/20 ; H01L21/306 ; H01L29/778 ; C23C16/30
Abstract:
A surface treatment method for a semiconductor layer includes growing a first layer on a substrate in a growth reactor, the first layer consisting of one of gallium nitride, aluminum gallium nitride and indium aluminum nitride; growing a second layer of gallium nitride on a surface of the first layer, the gallium nitride of the second GaN layer having a composition ratio of gallium to nitrogen larger than 2; taking the substrate out of the growth reactor after growing the second layer; and removing the second layer after taking the substrate out of the growth reactor.
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