Invention Grant
- Patent Title: Method for cooling semiconductor manufacturing apparatus and substrate support apparatus
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Application No.: US15667348Application Date: 2017-08-02
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Publication No.: US10109509B2Publication Date: 2018-10-23
- Inventor: Kunifumi Takaoka
- Applicant: NISSIN ION EQUIPMENT CO., LTD.
- Applicant Address: JP Kyoto-Shi, Kyoto
- Assignee: NISSIN ION EQUIPMENT CO., LTD.
- Current Assignee: NISSIN ION EQUIPMENT CO., LTD.
- Current Assignee Address: JP Kyoto-Shi, Kyoto
- Agency: Procopio, Cory, Hargreaves & Savitch LLP
- Priority: JP2016-225938 20161121
- Main IPC: H01L21/425
- IPC: H01L21/425 ; H01L21/67 ; H01L21/677 ; H01L21/683

Abstract:
A semiconductor manufacturing apparatus, which is provided with a first storage chamber that stores a substrate to be processed, a second storage chamber that stores a dummy substrate, a substrate support apparatus with a heating function that supports a substrate, and a substrate transport apparatus that transports the substrates between the storage chambers and the substrate support apparatus, is further provided with a controller which, in the event that the temperature of substrate processing in a preceding substrate processing step is higher than the temperature of substrate processing in a subsequent substrate processing step, operates the substrate transport apparatus to transport the dummy substrate, whose temperature is lower than the temperature of substrate processing in the preceding substrate processing step, prior to carrying out the subsequent substrate processing step.
Public/Granted literature
- US20180144956A1 METHOD FOR COOLING SEMICONDUCTOR MANUFACTURING APPARATUS AND SUBSTRATE SUPPORT APPARATUS Public/Granted day:2018-05-24
Information query
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