Invention Grant
- Patent Title: Method for fabricating package structure
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Application No.: US15383362Application Date: 2016-12-19
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Publication No.: US10109572B2Publication Date: 2018-10-23
- Inventor: Wei-Chung Hsiao
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW103139186A 20141112
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L21/56 ; H01L21/683 ; H01L23/00 ; H01L23/31 ; H01L23/498

Abstract:
A package structure is provided, which includes: a dielectric layer having opposite first and second surfaces; a first circuit layer embedded in the dielectric layer and having a surface exposed from the first surface of the dielectric layer; a plurality of conductive posts embedded in the dielectric layer and electrically connected to the first circuit layer and having one ends exposed from the second surface of the dielectric layer; a second circuit layer formed on the second surface of the dielectric layer and electrically connected the ends of the conductive posts exposed from the second surface of the dielectric layer; and a plurality of protruding elements formed on the surface of the first circuit layer exposed from the first surface of the dielectric layer, thereby providing a large contact area so as to strengthen bonding between a semiconductor chip and the first circuit layer of the package structure.
Public/Granted literature
- US20170162494A1 METHOD FOR FABRICATING PACKAGE STRUCTURE Public/Granted day:2017-06-08
Information query
IPC分类: