Invention Grant
- Patent Title: Semiconductor chip with electrically conducting layer
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Application No.: US14089971Application Date: 2013-11-26
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Publication No.: US10109592B2Publication Date: 2018-10-23
- Inventor: Chee Yang Ng
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L23/66 ; H01L23/00 ; H01L23/31 ; H01L23/29 ; H01L23/495 ; H01L21/56
Abstract:
A semiconductor device includes a semiconductor chip having a first main surface, a second main surface opposite to the first main surface, and a side wall surface. An electrical contact area is exposed at the side wall surface of the semiconductor chip. An electrically conducting layer covers at least partially the second main surface and the electrical contact area.
Public/Granted literature
- US20150145107A1 Semiconductor Chip with Electrically Conducting Layer Public/Granted day:2015-05-28
Information query
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