Invention Grant
- Patent Title: Semiconductor device including fin structures and manufacturing method thereof
-
Application No.: US14872083Application Date: 2015-09-30
-
Publication No.: US10109742B2Publication Date: 2018-10-23
- Inventor: Yuan-Shun Chao , Chih-Pin Tsao , Hou-Yu Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/49 ; H01L27/088 ; H01L29/06 ; H01L29/10 ; H01L29/66
Abstract:
A method for manufacturing a semiconductor device includes forming a fin structure over a substrate. The fin structure has a top surface and side surfaces and the top surface is located at a height H0 measured from the substrate. An insulating layer is formed over the fin structure and the substrate. In the first recessing, the insulating layer is recessed to a height T1 from the substrate, so that an upper portion of the fin structure is exposed from the insulating layer. A semiconductor layer is formed over the exposed upper portion. After forming the semiconductor layer, in the second recessing, the insulating layer is recessed to a height T2 from the substrate, so that a middle portion of the fin structure is exposed from the insulating layer. A gate structure is formed over the upper portion with the semiconductor layer and the exposed middle portion of the fin structure.
Public/Granted literature
- US20170092770A1 SEMICONDUCTOR DEVICE INCLUDING FIN STRUCTURES AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-03-30
Information query
IPC分类:
