- Patent Title: Semiconductor memory devices and methods of fabricating the same
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Application No.: US14831449Application Date: 2015-08-20
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Publication No.: US10109747B2Publication Date: 2018-10-23
- Inventor: Byong-Hyun Jang , Juhyung Kim , Woonkyung Lee , Jaegoo Lee , Chaeho Kim , Junkyu Yang , Phil Ouk Nam , Jaeyoung Ahn , Kihyun Hwang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2012-0084086 20120731
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/66 ; H01L29/423 ; H01L29/04 ; H01L29/10 ; H01L23/528 ; H01L29/51 ; H01L27/11582 ; H01L27/1157
Abstract:
A semiconductor memory device and a method of fabricating the same. The device includes a plurality of gates vertically stacked on a top surface of a substrate with an epitaxial layer formed in the substrate, a vertical channel vertically penetrating the gates to be electrically connected to the epitaxial layer, and a memory layer provided between the vertical channel and the gates. The epitaxial layer has a top surface positioned at a level between a bottom surface of the lowermost one of the gates and the top surface of the substrate.
Public/Granted literature
- US20150357346A1 SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME Public/Granted day:2015-12-10
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