Invention Grant
- Patent Title: Eliminating emissive sub-bandgap states in nanocrystals
-
Application No.: US15095001Application Date: 2016-04-08
-
Publication No.: US10109760B2Publication Date: 2018-10-23
- Inventor: Gyuweon Hwang , Donghun Kim , Jose M. Cordero , Mark W. B. Wilson , Chia-Hao M. Chuang , Jeffrey C. Grossman , Moungi G. Bawendi
- Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- Applicant Address: US MA Cambridge
- Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- Current Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- Current Assignee Address: US MA Cambridge
- Agency: Steptoe & Johnson LLP
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/036 ; H01L31/032 ; H01L31/0445 ; H01L51/00 ; H01L31/0352 ; H01L51/42

Abstract:
The size-dependent band-gap tunability and solution processability of nanocrystals (NCs) make them attractive candidates for optoelectronic applications. One factor that presently limits the device performance of NC thin films is sub-bandgap states, also referred to as trap states. Trap states can be controlled by surface treatment of the nanocrystals.
Public/Granted literature
- US20160336477A1 ELIMINATING EMISSIVE SUB-BANDGAP STATES IN NANOCRYSTALS Public/Granted day:2016-11-17
Information query
IPC分类: