Invention Grant
- Patent Title: Switching device and resistive random access memory including the same
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Application No.: US15156966Application Date: 2016-05-17
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Publication No.: US10109792B2Publication Date: 2018-10-23
- Inventor: Hyung Dong Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon
- Priority: KR10-2016-0002921 20160108
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
A switching device includes a first electrode and a second electrode, and an electrolyte layer disposed between the first electrode and the second electrode. The electrolyte layer includes a first layer charged with negative charges and a second layer charged with positive charges.
Public/Granted literature
- US20170200888A1 SWITCHING DEVICE AND RESISTIVE RANDOM ACCESS MEMORY INCLUDING THE SAME Public/Granted day:2017-07-13
Information query
IPC分类:
