Invention Grant
- Patent Title: Integrated inductor structure
-
Application No.: US14716899Application Date: 2015-05-20
-
Publication No.: US10115513B2Publication Date: 2018-10-30
- Inventor: Hsiao-Tsung Yen , Yuh-Sheng Jean , Ta-Hsun Yeh
- Applicant: Realtek Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: REALTEK SEMICONDUCTOR CORPORATION
- Current Assignee: REALTEK SEMICONDUCTOR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: CKC & Partners Co., Ltd.
- Priority: TW104103430A 20150202
- Main IPC: H01F27/32
- IPC: H01F27/32 ; H01F38/12 ; H01F27/28 ; H01F5/00 ; H01F17/00

Abstract:
An integrated inductor structure includes a guard ring, a patterned ground shield, and an inductor. The guard ring includes an inner ring, an outer ring, and an interlaced structure. The inner ring is disposed in a first metal layer, and includes at least two inner ring openings. The outer ring is disposed in a second metal layer, and includes at least one outer ring opening. The interlaced structure is coupled to one of the at least two inner ring openings and the outer ring opening in an interlaced manner, such that the outer ring opening is enclosed. The patterned ground shield is disposed at an inner side of the inner ring, and coupled to the inner ring and the outer ring. The inductor is formed above the guard ring and the patterned ground shield.
Public/Granted literature
- US20160225508A1 INTEGRATED INDUCTOR STRUCTURE Public/Granted day:2016-08-04
Information query