A method for producing self-aligned line end vias and the resulting device are provided. Embodiments include trench lines formed in a dielectric layer; each trench line including a pair of self aligned line end vias; and a high-density plasma (HDP) oxide, silicon carbide (SiC) or silicon carbon nitride (SiCNH) formed between each pair of self aligned line end vias, wherein the trench lines and self aligned line end vias are filled with a metal liner and metal.