Invention Grant
- Patent Title: Semiconductor device and semiconductor apparatus
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Application No.: US15430455Application Date: 2017-02-11
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Publication No.: US10115652B2Publication Date: 2018-10-30
- Inventor: Hideo Numabe , Koji Tateno , Yusuke Ojima , Yoshihiko Yokoi , Shinya Ishida , Hitoshi Matsuura
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2016-070540 20160331
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L23/34 ; H01L21/265 ; H01L21/285 ; H01L21/306 ; H01L21/311 ; H01L21/3205 ; H01L21/8234 ; H01L23/522 ; H01L23/528 ; H01L23/532 ; H01L49/02 ; H01L29/06 ; H03K17/16 ; H01L29/739 ; H01L29/74 ; H01L29/78 ; H01L29/861 ; H03K17/08
Abstract:
A semiconductor device includes a power device and a temperature detection diode. The semiconductor device has a device structure configured to insulate between a power lien of the power device and the temperature detection diode.
Public/Granted literature
- US20170287802A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS Public/Granted day:2017-10-05
Information query
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