Invention Grant
- Patent Title: Thermal dissipation through seal rings in 3DIC structure
-
Application No.: US14599834Application Date: 2015-01-19
-
Publication No.: US10115653B2Publication Date: 2018-10-30
- Inventor: Jing-Cheng Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/10
- IPC: H01L23/10 ; H01L23/34 ; H01L23/367 ; H01L21/50 ; H01L23/498 ; H01L21/48 ; H01L23/58 ; H01L25/065 ; H01L23/538 ; H01L23/00

Abstract:
A package includes a die, which includes a semiconductor substrate, a plurality of through-vias penetrating through the semiconductor substrate, a seal ring overlapping and connected to the plurality of through-vias, and a plurality of electrical connectors underlying the semiconductor substrate and connected to the seal ring. An interposer is underlying and bonded to the die. The interposer includes a substrate, and a plurality of metal lines over the substrate. The plurality of metal lines is electrically coupled to the plurality of electrical connectors. Each of the plurality metal lines has a first portion overlapped by the first die, and a second portion misaligned with the die. A heat spreader encircles the die and the interposer. A wire includes a first end bonded to one of the plurality of metal lines, and a second end bonded to the heat spreader.
Public/Granted literature
- US20150129190A1 Thermal Dissipation Through Seal Rings in 3DIC Structure Public/Granted day:2015-05-14
Information query
IPC分类: