Invention Grant
- Patent Title: Semiconductor device containing multilayer titanium nitride diffusion barrier and method of making thereof
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Application No.: US15617499Application Date: 2017-06-08
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Publication No.: US10115735B2Publication Date: 2018-10-30
- Inventor: Fumitaka Amano , Kensuke Ishikawa , Shinya Inoue , Michiaki Sano
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/11582 ; H01L23/532 ; H01L29/45 ; H01L27/11556 ; H01L23/522 ; H01L21/768 ; H01L21/02 ; H01L27/11521 ; H01L27/11526 ; H01L27/11568 ; H01L27/11573 ; H01L27/11519 ; H01L27/11565
Abstract:
A semiconductor device includes a silicon surface, a titanium silicide layer contacting the silicon surface, a first titanium nitride layer located over the titanium silicide layer, a titanium oxynitride layer contacting the first titanium nitride layer, a second titanium nitride layer contacting the titanium oxynitride layer, and a metal fill layer located over the second titanium nitride layer.
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