Provided is a manufacturing method for an active matrix substrate, capable of providing a hole for alignment at an interlayer dielectric film without possible etching of a substrate surface and abnormal electric discharge and of allowing the position of a formed film to be easily corrected to be aligned with the position of the film of the lowest layer, with high overlaying precision. Also provided are the active matrix substrate and a display apparatus comprising the active matrix substrate.An interlayer dielectric film 14 of the active matrix substrate is formed using an SOG material with photosensitivity, and an adjustment hole 14b for adjustment of the patterns of a gate insulation film 15, a first semiconductor film 16, a second semiconductor film 17 and a source metal that are formed on the upper side of a substrate 10 and the interlayer dielectric film 14 is formed. The position of each film is adjusted while viewing an edge of the gate wiring 11 through the adjustment hole 14b.