Invention Grant
- Patent Title: Method, apparatus and system for improved performance using tall fins in finFET devices
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Application No.: US15343821Application Date: 2016-11-04
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Publication No.: US10115807B2Publication Date: 2018-10-30
- Inventor: Hui Zang , Min-Hwa Chi , Jinping Liu
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L29/66 ; H01L29/08 ; H01L21/306 ; H01L21/02 ; H01L29/78
Abstract:
At least one method, apparatus and system disclosed herein fin field effect transistor (finFET) comprising a tall fin having a plurality of epitaxial regions. A first fin of a transistor is formed. The first fin comprising a first portion comprising silicon, a second portion comprising silicon germanium and a third portion comprising silicon. A gate structure above the third portion is formed. An etching process is performed for removing the silicon germanium of the second portion that is not below the gate structure. A first epitaxy region is formed above the first portion. A second epitaxy region is formed vertically aligned with the first epitaxy region and above the silicon germanium of the second portion that is below the gate structure.
Public/Granted literature
- US20170141214A1 METHOD, APPARATUS AND SYSTEM FOR IMPROVED PERFORMANCE USING TALL FINS IN FINFET DEVICES Public/Granted day:2017-05-18
Information query
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