Invention Grant
- Patent Title: Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zone
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Application No.: US15249758Application Date: 2016-08-29
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Publication No.: US10120287B2Publication Date: 2018-11-06
- Inventor: Roland Rupp , Rudolf Elpelt , Romain Esteve
- Applicant: Infineon Technologies AG
- Applicant Address: DE
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE
- Agency: Design IP
- Priority: DE102015114429 20150828
- Main IPC: G03F7/20
- IPC: G03F7/20 ; H01L21/027 ; H01L23/544 ; H01L29/06 ; H01L29/16 ; H01L29/36 ; H01L21/04 ; H01L29/66
Abstract:
A beam modifier device is provided that includes scattering portions in which particles vertically impinging on an exposure surface of the beam modifier device are deflected from a vertical direction. A total permeability for the particles changes along a lateral direction parallel to the exposure surface.
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