Invention Grant
- Patent Title: Film capacitor and the method of forming the same
-
Application No.: US14943433Application Date: 2015-11-17
-
Publication No.: US10128044B2Publication Date: 2018-11-13
- Inventor: Daniel Qi Tan , Lili Zhang , Joseph Lucian Smolenski , Jeffrey S Sullivan
- Applicant: General Electric Company
- Applicant Address: US NY Schenectady
- Assignee: GENERAL ELECTRIC COMPANY
- Current Assignee: GENERAL ELECTRIC COMPANY
- Current Assignee Address: US NY Schenectady
- Agency: GE Global Patent Operation
- Agent Nitin Joshi
- Main IPC: H01G4/33
- IPC: H01G4/33 ; H01G4/005 ; H01G4/28 ; H01G4/32 ; H01G2/08 ; H01G4/258

Abstract:
A film capacitor is presented. The film capacitor includes a thermally conductive support. The thermally conductive support includes a core including a first end and a second end. The thermally conductive support further includes a protrusion extending from at least one of the first end and the second end of the core, where at least one of the core and the protrusion includes a phase change material. Further, the film capacitor also includes a plurality of films disposed on at least a portion of the thermally conductive support, where the plurality of films includes a plurality of electrode films and a dielectric film. Further, the thermally conductive support for the film capacitor and a method of forming the film capacitor are also presented.
Public/Granted literature
- US20170140875A1 FILM CAPACITOR AND THE METHOD OF FORMING THE SAME Public/Granted day:2017-05-18
Information query