Invention Grant
- Patent Title: Amorphization induced metal-silicon contact formation
-
Application No.: US14874623Application Date: 2015-10-05
-
Publication No.: US10128114B2Publication Date: 2018-11-13
- Inventor: Bartlomiej Jan Pawlak
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L21/265
- IPC: H01L21/265
Abstract:
A method of forming a metal-silicon contact is provided. Embodiments include forming a metal layer over a substrate; forming an amorphous silicon (a-Si) capping layer over the metal layer; implanting ions to induce an athermal migration of the a-Si capping layer into the metal layer; and annealing the metal layer and the a-Si capping layer to form a metal silicide layer over the substrate.
Public/Granted literature
- US20170098544A1 AMOPHIZATION INDUCED METAL-SILICON CONTACT FORMATION Public/Granted day:2017-04-06
Information query
IPC分类:
