A semiconductor device including: a semiconductor substrate a semiconductor element is formed; a first electrode layer stacked on the semiconductor substrate and connected to the semiconductor element; a first insulation film stacked on an upper face of the first electrode layer; and a second electrode layer stacked over the first electrode layer and the first insulation film, the second electrode layer including a material having a mechanical strength that is higher than a mechanical strength of a material included in the first electrode layer; wherein a groove portion is provided from the upper face in a direction toward a lower face of the first electrode layer, a protrusion portion protruding into the groove portion is provided on a lower face of the second electrode layer, and a lower end of the protrusion portion is positioned below the center position in a thickness direction of the first electrode layer.