In the present disclosure, a non-volatile memory cell comprises a data storage unit, a selection unit and a switching unit. The data storage unit is configured to store an information bit and has a first end and a second end. The first end is coupled to a bit line. The selection unit is configured to access the data storage unit, and the selection unit has a first end coupled to a select line, a second end coupled to the second end of the data storage unit, and a third end coupled to a source line. The switching unit is configured to perform a formation operation and has a first end coupled to a forming line and a second end coupled to the second end of the data storage unit.