Invention Grant
- Patent Title: Semiconductor device including amplifier
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Application No.: US15654331Application Date: 2017-07-19
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Publication No.: US10128802B2Publication Date: 2018-11-13
- Inventor: Kazuhiro Yoshida , Hisayuki Nagamine
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Priority: JP2014-105198 20140521
- Main IPC: H03F1/52
- IPC: H03F1/52 ; G11C7/10 ; G11C7/02 ; H02H9/04 ; H01L27/02 ; G11C11/4093 ; G11C11/4074
Abstract:
Disclosed here is an apparatus that comprises an amplifier having first and second input nodes, first and second resistors, a first electrostatic discharge protection circuit coupled between the first input node and the first resistor, and a second electrostatic discharge protection circuit coupled between the second input node and the second resistor.
Public/Granted literature
- US20170317652A1 SEMICONDUCTOR DEVICE INCLUDING AMPLIFIER Public/Granted day:2017-11-02
Information query
