A semiconductor memory is disclosed that includes a first data line, a first coupling line, and a second coupling line. The first coupling line is configured to capacitively couple the first coupling line with the first data line. The second coupling line is configured to capacitively couple the second coupling line with the first data line. The first data line and the first coupling line are formed in a first conductive layer, and the second coupling line is formed in a second conductive layer that is different from the first conductive layer.