Invention Grant
- Patent Title: Methods of forming a low-k dielectric layer and methods of fabricating a semiconductor device using the same
-
Application No.: US15349359Application Date: 2016-11-11
-
Publication No.: US10134583B2Publication Date: 2018-11-20
- Inventor: Sunhye Hwang , Myong Woon Kim , Younjoung Cho , Sang Ick Lee , Sang Yong Jeon , In Kyung Jung , Wonwoong Chung , Jungsik Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do KR Daejeon
- Assignee: Samsung Electronics Co., Ltd.,DNF Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.,DNF Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do KR Daejeon
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2016-0006647 20160119
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/768 ; H01L21/31 ; H01L23/48 ; C23C16/40 ; H01L23/532 ; C23C16/56 ; C01B33/12
Abstract:
A method of forming a dielectric layer includes forming a preliminary dielectric layer on a substrate using a silicon precursor and performing an energy treatment on the preliminary dielectric layer to form a dielectric layer. In the dielectric layer, a ratio of Si—CH3 bonding unit to Si—O bonding unit ranges from 0.5 to 5.
Public/Granted literature
Information query
IPC分类:
