Invention Grant
- Patent Title: Method of forming patterns and method of manufacturing integrated circuit device using the same
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Application No.: US14712920Application Date: 2015-05-15
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Publication No.: US10134606B2Publication Date: 2018-11-20
- Inventor: Sang-yoon Woo , Hyun-woo Kim , Ju-hyung An , Jin-young Yoon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2014-0060484 20140520
- Main IPC: H01L21/027
- IPC: H01L21/027 ; H01L21/3213 ; G03F7/16 ; G03F7/20 ; G03F7/32 ; G03F7/34 ; G03F7/039 ; G03F7/09 ; H01L21/033 ; H01L21/308 ; H01L21/311 ; H01L27/108
Abstract:
A method of forming patterns may use an organic reflection-preventing film including a polymer having an acid-liable group. A photoresist film is formed on the organic reflection-preventing film. A first area selected from the photoresist film is exposed to generate an acid in the first area. Hydrophilicity of a first surface of the organic reflection-preventing film facing the first area of the photoresist film may be increased. The photoresist film including the exposed first area is developed to remove a non-exposed area of the photoresist film. The organic reflection-preventing film and a target layer are anisotropically etched by using the first area of the photoresist film as an etch mask.
Public/Granted literature
- US20150340246A1 METHOD OF FORMING PATTERNS AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME Public/Granted day:2015-11-26
Information query
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