Invention Grant
- Patent Title: Semiconductor manufacturing apparatus and method of manufacturing semiconductor device
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Application No.: US14467406Application Date: 2014-08-25
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Publication No.: US10134612B2Publication Date: 2018-11-20
- Inventor: Kyoichi Suguro
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2014-027479 20140217
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H05B6/80 ; H01L21/324

Abstract:
In one embodiment, a semiconductor manufacturing apparatus includes a support module configured to support a wafer having first and second faces. The apparatus further includes a chamber configured to contain the support module. The apparatus further includes a microwave generator configured to generate a microwave. The apparatus further includes a waveguide configured to emit the microwave into the chamber to irradiate the first or second face of the wafer with the microwave, the waveguide being provided to the chamber such that an incidence direction of the microwave emitted from the waveguide onto the first or second face is non-vertical to the first or second face.
Public/Granted literature
- US20150235878A1 Semiconductor Manufacturing Apparatus and Method of Manufacturing Semiconductor Device Public/Granted day:2015-08-20
Information query
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