Invention Grant
- Patent Title: Semiconductor device including a semiconductor substrate, a pillar, and a beam
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Application No.: US14663878Application Date: 2015-03-20
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Publication No.: US10134742B2Publication Date: 2018-11-20
- Inventor: Takeshi Kishida
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Priority: JP2014-072115 20140331
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
The semiconductor storage device includes a lower electrode that are vertically extended from a semiconductor substrate, a beam including a first portion extending in a horizontal direction to support the lower electrode and a second portion that is vertically extended along the exterior wall of the electrode from the first portion.
Public/Granted literature
- US20150279845A1 Semiconductor Memory Devices Including Support Film Supporting Capacitor Electrodes Public/Granted day:2015-10-01
Information query
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