Invention Grant
- Patent Title: Semiconductor device having a graphene layer, and method of manufacturing thereof
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Application No.: US15464405Application Date: 2017-03-21
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Publication No.: US10134848B2Publication Date: 2018-11-20
- Inventor: Guenther Ruhl , Hans-Joachim Schulze , Thomas Zimmer , Gunther Lippert
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102016105610 20160324
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L29/16 ; H01L21/762 ; H01L21/02 ; H01L21/18 ; H01L21/265 ; H01L21/324 ; H01L21/56 ; H01L21/78 ; H01L29/04 ; H01L29/165 ; H01L21/683 ; H01L29/06
Abstract:
A method for manufacturing a semiconductor device includes: providing a carrier wafer and a silicon carbide wafer; bonding a first side of the silicon carbide wafer to the carrier wafer; splitting the silicon carbide wafer bonded to the carrier wafer into a silicon carbide layer thinner than the silicon carbide wafer and a residual silicon carbide wafer, the silicon carbide layer remaining bonded to the carrier wafer during the splitting; and forming a graphene material on the silicon carbide layer.
Public/Granted literature
- US20170278930A1 Semiconductor Device Having a Graphene Layer, and Method of Manufacturing Thereof Public/Granted day:2017-09-28
Information query
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