Invention Grant
- Patent Title: Quantum dot LED package structure
-
Application No.: US15529507Application Date: 2017-04-19
-
Publication No.: US10134962B2Publication Date: 2018-11-20
- Inventor: Yong Fan
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Shenzhen, Guangdong
- Agent Leong C. Lei
- Priority: CN201710202967 20170330
- International Application: PCT/CN2017/081034 WO 20170419
- International Announcement: WO2018/176525 WO 20181004
- Main IPC: H01L51/56
- IPC: H01L51/56 ; H01L33/56 ; H01L33/06 ; H01L33/64

Abstract:
Provided is a quantum dot LED package structure comprising a bottom bracket, an external bracket, a quantum dot layer light emitting chip, an inorganic barrier layer and a top silica gel layer, wherein the inorganic barrier layer covers the external bracket and the quantum dot layer light emitting chip on the bottom bracket to package the external bracket and the quantum dot layer light emitting chip; the external bracket and the quantum dot layer light emitting chip are packaged by using the inorganic barrier layer, and a top silica gel layer is provided on the inorganic barrier layer, and the water and oxygen barrier condition that the existing package structure simply using the silica gel layer cannot meet can be satisfied and good heat dissipation can be provided. Thus, the issues of mass production difficulty, high cost, low luminous efficiency, difficulty to achieve narrow border application can be solved.
Public/Granted literature
- US20180309032A1 QUANTUM DOT LED PACKAGE STRUCTURE Public/Granted day:2018-10-25
Information query
IPC分类: