Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15491875Application Date: 2017-04-19
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Publication No.: US10135337B2Publication Date: 2018-11-20
- Inventor: Ryohei Nega , Yoshinao Miura
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2012-233481 20121023
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H02M3/158 ; H02M1/34 ; H01L29/205 ; H01L23/498 ; H01L29/20 ; H01L29/423
Abstract:
Provided is a semiconductor device including a DC/DC converter circuit, wherein the DC/DC converter circuit includes a transistor of a normally-off type, having a first drain electrode connected town input terminal and a first source electrode connected to an output terminal, which is formed in a first compound semiconductor substrate having a two-dimensional electron gas layer, and a transistor having a second drain electrode connected to the first source electrode and a grounded second source electrode.
Public/Granted literature
- US20170222559A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-08-03
Information query
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