According to one embodiment, a memory system includes a semiconductor memory and a controller. The semiconductor memory is configured to execute a first to third read operations. In the first read operation, a first voltage is applied to a selected word line. In the second read operation, a second voltage different from the first voltage and a third voltage are applied to the selected word line. In the third read operation, a fourth voltage different from the first to third voltages and a fifth voltage are applied to the selected word line. An absolute value of a difference between the second voltage and the fourth voltage is different from an absolute value of a difference between the third voltage and the fifth voltage.