Invention Grant
- Patent Title: Thin film capacitor including alternatively disposed dielectric layers having different thicknesses
-
Application No.: US15463652Application Date: 2017-03-20
-
Publication No.: US10141115B2Publication Date: 2018-11-27
- Inventor: Kyo Yeol Lee , Yun Sung Kang , Hai Joon Lee , Dong Joon Oh , Ho Phil Jung , Seung Mo Lim
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2016-0114639 20160906
- Main IPC: H01G4/33
- IPC: H01G4/33 ; H01G4/012 ; H01G4/12

Abstract:
A thin film capacitor includes a body having first and second electrode layers and first and second dielectric layers alternately stacked on a substrate. A thickness of the first dielectric layer is 1.2 to 3 times that of the second dielectric layer. Therefore, leakage current characteristics of the dielectric layers may be improved, and capacitance of the thin film capacitor may be secured.
Public/Granted literature
- US20180068798A1 THIN FILM CAPACITOR Public/Granted day:2018-03-08
Information query