Invention Grant
- Patent Title: Plasma processing apparatus and sample stage thereof
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Application No.: US15016438Application Date: 2016-02-05
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Publication No.: US10141165B2Publication Date: 2018-11-27
- Inventor: Hironori Kusumoto , Yutaka Ohmoto , Kazunori Nakamoto , Koji Nagai
- Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Baker Botts L.L.P.
- Priority: JP2013-018017 20130201
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01J37/32

Abstract:
There is disclosed a plasma processing apparatus for processing a wafer put on a sample stage disposed in a processing chamber within a vacuum vessel by the use of a plasma generated in the processing chamber after mounting the wafer on the sample stage. The apparatus has heaters in areas of the interior of the sample stage which are divided radially and circumferentially. At least those of the heaters which are arranged in the areas located in the radially outer position include circumferentially arranged heater portions that are connected in series. The amounts of heat generated by these circumferentially arranged heater portions are adjusted.
Public/Granted literature
- US20160155617A1 PLASMA PROCESSING APPARATUS AND SAMPLE STAGE THEREOF Public/Granted day:2016-06-02
Information query
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