Invention Grant
- Patent Title: Fabricating method of a semiconductor device with a high-K dielectric layer having a U-shape profile
-
Application No.: US14949896Application Date: 2015-11-24
-
Publication No.: US10141193B2Publication Date: 2018-11-27
- Inventor: Chin-Cheng Chien , Chun-Yuan Wu , Chih-Chien Liu , Chin-Fu Lin , Teng-Chun Tsai
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/423 ; H01L29/49 ; H01L29/51 ; H01L29/66
Abstract:
A semiconductor device including a substrate, a spacer and a high-k dielectric layer having a U-shape profile is provided. The spacer located on the substrate surrounds and defines a trench. The high-k dielectric layer having a U-shape profile is located in the trench, and the high-k dielectric layer having a U-shape profile exposes an upper portion of the sidewalls of the trench.
Public/Granted literature
- US20160079067A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2016-03-17
Information query
IPC分类:
