Invention Grant
- Patent Title: Semiconductor device and manufacturing method for semiconductor device
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Application No.: US15852935Application Date: 2017-12-22
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Publication No.: US10141279B2Publication Date: 2018-11-27
- Inventor: Masanori Shindo
- Applicant: LAPIS Semiconductor Co., Ltd.
- Applicant Address: JP Yokohama
- Assignee: LAPIS Semiconductor Co., Ltd.
- Current Assignee: LAPIS Semiconductor Co., Ltd.
- Current Assignee Address: JP Yokohama
- Agency: Rabin & Berdo, P.C.
- Priority: JP2016-251532 20161226
- Main IPC: H01L23/488
- IPC: H01L23/488 ; H01L23/00 ; H01L23/498

Abstract:
A semiconductor device includes a semiconductor substrate, a conductor provided on a main surface of the semiconductor substrate, an insulating layer disposed to cover a surface of the conductor and having a recess from a surface thereof towards the conductor, the recess having an opening provided at a bottom portion of the recess and exposing a portion of the conductor, and an external connection terminal connected to the portion of the conductor exposed from the opening. In a plan view of the semiconductor device, the external connection terminal covers the entire opening, and the entire external connection terminal is within the recess.
Public/Granted literature
- US20180182725A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE Public/Granted day:2018-06-28
Information query
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