Invention Grant
- Patent Title: Microstructure modulation for 3D bonded semiconductor containing an embedded resistor structure
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Application No.: US15440892Application Date: 2017-02-23
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Publication No.: US10141391B2Publication Date: 2018-11-27
- Inventor: Chih-Chao Yang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Steven J. Meyers
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L49/02 ; H01L25/065 ; H01L23/522 ; H01L23/532 ; H01L21/324 ; H01L21/306 ; H01L23/00
Abstract:
A three-dimensional (3D) bonded semiconductor structure is provided in which a first bonding oxide layer of a first semiconductor structure is bonded to a second bonding oxide layer of a second semiconductor structure. Each of the first and second bonding oxide layers has a metallic pad structure embedded therein, wherein each metallic pad structure has a columnar grain microstructure. A metal resistor structure is embedded in one of the first bonding oxide layer or the second bonding oxide and is present between the first and second metallic pad structures.
Public/Granted literature
- US20180240859A1 MICROSTRUCTURE MODULATION FOR 3D BONDED SEMICONDUCTOR CONTAINING AN EMBEDDED RESISTOR STRUCTURE Public/Granted day:2018-08-23
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