- Patent Title: FinFET having isolation structure and method of forming the same
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Application No.: US15595724Application Date: 2017-05-15
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Publication No.: US10141429B2Publication Date: 2018-11-27
- Inventor: Chia-Chung Chen , Fu-Huan Tsai , Feng Yuan
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L29/66 ; H01L29/06 ; H01L27/092 ; H01L27/12 ; H01L27/108 ; H01L29/78 ; H01L21/762 ; H01L21/8234
Abstract:
A transistor includes a substrate having an upper surface, a fin structure protruding from the upper surface of the substrate, a first isolation structure over the upper surface of the substrate, and a second isolation structure. The fin structure extends along a first direction and comprising a lower portion and an upper portion. The first isolation structure surrounds the lower portion of the fin structure. The second isolation structure is at least partially embedded in the upper portion of the fin structure.
Public/Granted literature
- US20170250267A1 FinFET Having Isolation Structure and Method of Forming the Same Public/Granted day:2017-08-31
Information query
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