Invention Grant
- Patent Title: Plasma processing method and plasma processing apparatus
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Application No.: US14356719Application Date: 2012-10-17
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Publication No.: US10144040B2Publication Date: 2018-12-04
- Inventor: Wataru Yoshikawa , Naoki Matsumoto
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2011-244679 20111108
- International Application: PCT/JP2012/076824 WO 20121017
- International Announcement: WO2013/069424 WO 20130516
- Main IPC: B08B7/00
- IPC: B08B7/00 ; C23C16/511 ; H01J37/32

Abstract:
A plasma processing apparatus includes a slot plate of an antenna and the slot plate has slots arranged in a circumferential direction thereof with respect to an axis line. A microwave is introduced into a processing space from the antenna via a dielectric window, and a through hole is formed in the dielectric window along the axis line. A plasma processing method performed in the plasma processing apparatus includes performing a first cleaning process by radiating the microwave from the antenna and supplying a cleaning gas from a cleaning gas supply system; and performing a second cleaning process by radiating the microwave from the antenna and supplying the cleaning gas from the cleaning gas supply system. A first pressure of the processing space in the performing of the first cleaning process is set to be lower than a second pressure thereof in the performing of the second cleaning process.
Public/Granted literature
- US20140299152A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS Public/Granted day:2014-10-09
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