Invention Grant
- Patent Title: Method and apparatus for laser processing of silicon by filamentation of burst ultrafast laser pulses
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Application No.: US14556078Application Date: 2014-11-28
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Publication No.: US10144088B2Publication Date: 2018-12-04
- Inventor: S. Abbas Hosseini
- Applicant: ROFIN-SINAR TECHNOLOGIES INC.
- Applicant Address: US MI Plymouth
- Assignee: ROFIN-SINAR TECHNOLOGIES LLC
- Current Assignee: ROFIN-SINAR TECHNOLOGIES LLC
- Current Assignee Address: US MI Plymouth
- Agency: Woodling, Krost and Rust
- Main IPC: B23K26/00
- IPC: B23K26/00 ; B23K26/40 ; B23K26/06 ; B23K26/08 ; B23K26/53 ; B23K26/364 ; B23K103/00

Abstract:
A method for laser processing of Silicon includes placing a Kerr material into engagement with the Silicon forming an interface therebetween. A laser beam is applied having at least one subpulse in a burst envelope operating at a first wavelength. The laser beam passes through a distributive lens focusing assembly and to the Kerr material. The first wavelength is modified to a plurality of second wavelengths, some of which are effective for processing Silicon. Photoacoustic compression processing is produced by the laser pulse energy by a portion of second wavelengths delivered through the interface and to the Silicon which initiates Kerr Effect self focusing which is propagated in the Silicon by additional energy input to the Silicon thus producing a filament within the Silicon.
Public/Granted literature
- US20150151380A1 METHOD AND APPARATUS FOR LASER PROCESSING OF SILICON BY FILAMENTATION OF BURST ULTRAFAST LASER PULSES Public/Granted day:2015-06-04
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