Invention Grant
- Patent Title: Metal pattern forming method
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Application No.: US15687992Application Date: 2017-08-28
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Publication No.: US10147612B2Publication Date: 2018-12-04
- Inventor: Tsutomu Nakanishi , Yusuke Tanaka , Atsushi Hieno , Yasuhito Yoshimizu , Akihiko Happoya
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2017-056486 20170322
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01L21/033 ; H01L21/311

Abstract:
A metal pattern forming method according to an embodiment includes forming a metal film on a surface of a substrate by an electroless plating method, the substrate including a first layer including a protrusion and a recess, and a film thickness of the metal film being a half or more of a width of the recess; and performing wet etching, the metal film in the recess removed by the wet etching and the metal film on the protrusion remained after the wet etching.
Public/Granted literature
- US20180277390A1 METAL PATTERN FORMING METHOD Public/Granted day:2018-09-27
Information query
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