Invention Grant
- Patent Title: Lateral MOSFET
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Application No.: US15624280Application Date: 2017-06-15
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Publication No.: US10147814B2Publication Date: 2018-12-04
- Inventor: Huei-Ru Liu , Chien-Chih Chou , Kong-Beng Thei
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/088 ; H01L29/423 ; H01L29/66 ; H01L29/06 ; H01L29/10 ; H01L29/40 ; H01L21/265 ; H01L21/28 ; H01L21/311 ; H01L21/3213 ; H01L21/762 ; H01L21/8234 ; H01L29/08
Abstract:
A method includes forming a first isolation region in a substrate, wherein a top surface of the first isolation region is level with a top surface of the substrate, removing an upper portion of the first isolation region to form a recess, depositing a gate dielectric layer over the first isolation region, forming a gate electrode layer over the gate dielectric layer and patterning the gate electrode layer to form a gate electrode region, wherein a first portion of the gate electrode region is vertically aligned with the first isolation region and a second portion of the gate electrode region is formed over the substrate, and where a top surface of the first portion is lower than a top surface of the second portion.
Public/Granted literature
- US20170288054A1 Lateral MOSFET Public/Granted day:2017-10-05
Information query
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