Invention Grant
- Patent Title: Light emitting diode with light emitting layer containing nitrogen and phosphorus
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Application No.: US15195004Application Date: 2016-06-28
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Publication No.: US10147840B2Publication Date: 2018-12-04
- Inventor: Stephane Turcotte
- Applicant: Lumileds LLC
- Applicant Address: US CA San Jose
- Assignee: LUMILEDS LLC
- Current Assignee: LUMILEDS LLC
- Current Assignee Address: US CA San Jose
- Agency: Volpe and Koenig, P.C.
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/06 ; H01L33/12 ; H01L33/32 ; H01L33/30
Abstract:
Embodiments of the invention include an n-type region, a p-type region, and a light emitting layer disposed between the n-type region and the p-type region. The light emitting layer is a III-V material comprising nitrogen and phosphorus. The device also includes a graded region disposed between the light emitting layer and one of the p-type region and the n-type region. The composition of materials in the graded region is graded.
Public/Granted literature
- US20160308088A1 LIGHT EMITTING DIODE WITH LIGHT EMITTING LAYER CONTAINING NITROGEN AND PHOSPHORUS Public/Granted day:2016-10-20
Information query
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