Invention Grant
- Patent Title: Plasma etching apparatus
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Application No.: US14019023Application Date: 2013-09-05
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Publication No.: US10153138B2Publication Date: 2018-12-11
- Inventor: Tadashi Aoto , Daisuke Hayashi
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2012-197556 20120907
- Main IPC: H01L21/687
- IPC: H01L21/687 ; H01J37/32 ; H01L21/683 ; H01L21/67
Abstract:
Disclosed is a plasma etching apparatus which includes: a base formed of a metal that has a lower expansion coefficient than aluminum; an electrostatic chuck disposed on a mounting surface of the base and configured to mount an object to be processed; a bonding layer which bonds the base to the electrostatic chuck; and a heater provided within the electrostatic chuck. In the plasma etching apparatus, the base is provided with a metal portion that is formed through a cold spraying by using a metal that has a higher thermal conductivity than the metal for forming the base.
Public/Granted literature
- US20140069585A1 PLASMA ETCHING APPARATUS Public/Granted day:2014-03-13
Information query
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