Invention Grant
- Patent Title: Method for making a dipole-based contact structure to reduce the metal-semiconductor contact resistance in MOSFETs
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Application No.: US15417848Application Date: 2017-01-27
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Publication No.: US10153201B2Publication Date: 2018-12-11
- Inventor: Huiming Bu , Hui-feng Li , Vijay Narayanan , Hiroaki Niimi , Tenko Yamashita
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , GlobalFoundries, Inc. , The Research Foundation for The State University of New York
- Applicant Address: US NY Armonk KY Grand Cayman US NY Albany
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.,THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK SUNY POLYTECHNIC INSTITUTE
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.,THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK SUNY POLYTECHNIC INSTITUTE
- Current Assignee Address: US NY Armonk KY Grand Cayman US NY Albany
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/8238 ; H01L23/535 ; H01L23/528 ; H01L23/532 ; H01L29/66 ; H01L29/78 ; H01L21/285 ; H01L23/485 ; H01L29/08 ; H01L27/092
Abstract:
A transistor device includes a substrate; a source region and a drain region formed over the substrate; and a source/drain contact formed in contact with at least one of the source region and the drain region, the source/drain contact including a conductive metal and a bilayer disposed between the conductive metal and the at least one of the source and drain region, the bilayer including a metal oxide layer in contact with the conductive metal, and a silicon dioxide layer in contact with the at least one of the source and drain region.
Public/Granted literature
- US20170133265A1 ADVANCED MOSFET CONTACT STRUCTURE TO REDUCE METAL-SEMICONDUCTOR INTERFACE RESISTANCE Public/Granted day:2017-05-11
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