Invention Grant
- Patent Title: Group III heterojunction semiconductor device having silicon carbide-containing lateral diode
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Application No.: US14573062Application Date: 2014-12-17
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Publication No.: US10153276B2Publication Date: 2018-12-11
- Inventor: Anton Mauder , Khalil Hosseini , Frank Kahlmann
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L27/07
- IPC: H01L27/07 ; H01L27/06 ; H01L29/16 ; H01L29/872 ; H01L29/417 ; H01L29/778 ; H01L21/8252 ; H01L21/8258 ; H01L29/20
Abstract:
In an embodiment, a semiconductor device includes a silicon carbide layer comprising a lateral diode, and a Group III nitride based semiconductor device arranged on the silicon carbide layer.
Public/Granted literature
- US20160181240A1 Semiconductor Device and Method Public/Granted day:2016-06-23
Information query
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