Invention Grant
- Patent Title: Heterojunction bipolar transistor device integration schemes on a same wafer
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Application No.: US15360295Application Date: 2016-11-23
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Publication No.: US10153361B2Publication Date: 2018-12-11
- Inventor: Renata A. Camillo-Castillo , Vibhor Jain , Qizhi Liu , Anthony K. Stamper
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotkowski Safran Cole & Calderon, P.C.
- Agent Michael Le Strange; Andrew M. Calderon
- Main IPC: H01L29/737
- IPC: H01L29/737 ; H01L21/8222 ; H01L21/02 ; H01L21/268 ; H01L21/324 ; H01L27/082 ; H01L29/04 ; H01L29/06 ; H01L29/16 ; H01L29/161 ; H01L29/167 ; H01L29/66 ; H03F3/21
Abstract:
The present disclosure generally relates to semiconductor structures and, more particularly, to heterojunction bipolar transistor device integration schemes on a same wafer and methods of manufacture. The structure includes: a power amplifier (PA) device comprising a base, a collector and an emitter on a wafer; and a low-noise amplifier (LNA) device comprising a base, a collector and an emitter on the wafer, with the emitter having a same crystalline structure as the base.
Public/Granted literature
- US20180145160A1 HETEROJUNCTION BIPOLAR TRANSISTOR DEVICE INTEGRATION SCHEMES ON A SAME WAFER Public/Granted day:2018-05-24
Information query
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