Invention Grant
- Patent Title: Semiconductor structure with inverted U-shaped cap layer
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Application No.: US15627427Application Date: 2017-06-19
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Publication No.: US10153369B2Publication Date: 2018-12-11
- Inventor: En-Chiuan Liou , Yu-Cheng Tung
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW106115398A 20170510
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/088 ; H01L29/66
Abstract:
The present invention provides a semiconductor structure, the semiconductor structure comprises a substrate having a dielectric layer disposed thereon, a gate conductive layer disposed on the substrate and disposed in the dielectric layer, two spacers, disposed on two sides of the gate conductive layer respectively, wherein a top surface of the two spacers is lower than a top surface of the gate conductive layer, and a cap layer overlying the top surface and two sidewalls of the gate conductive layer, wherein parts of the cap layer are located right above the two spacers.
Public/Granted literature
- US20180331219A1 SEMICONDUCTOR STRUCTURE WITH INVERTED U-SHAPED CAP LAYER Public/Granted day:2018-11-15
Information query
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