Invention Grant
- Patent Title: Current measurement in a power semiconductor device
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Application No.: US15377750Application Date: 2016-12-13
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Publication No.: US10153764B2Publication Date: 2018-12-11
- Inventor: Markus Bina , Jens Barrenscheen , Anton Mauder
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102015121722 20151214
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H03K17/56 ; G01R19/00 ; H01L49/02 ; H01L29/68

Abstract:
A semiconductor device includes a first load terminal, a second load terminal and a semiconductor body coupled to the first load terminal and the second load terminal. The semiconductor body is configured to conduct a load current along a load current path between the first load terminal and the second load terminal. The semiconductor device further includes a control electrode electrically insulated from the semiconductor body and configured to control a part of the load current path, and an electrically floating sensor electrode arranged adjacent to the control electrode. The sensor electrode is electrically insulated from each of the semiconductor body, and the control electrode and is capacitively coupled to the load current path.
Public/Granted literature
- US20170170823A1 Current Measurement in a Power Semiconductor Device Public/Granted day:2017-06-15
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