Invention Grant
- Patent Title: Implementing enhanced magnetic memory cell
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Application No.: US14834743Application Date: 2015-08-25
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Publication No.: US10157656B2Publication Date: 2018-12-18
- Inventor: Zvonimir Z. Bandic , Jeffery Robinson Childress , Luiz M. Franca-Neto , Jordan Asher Katine , Neil Leslie Robertson
- Applicant: Western Digital Technologies, Inc.
- Applicant Address: US CA San Jose
- Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
- Current Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
- Current Assignee Address: US CA San Jose
- Agency: Patterson & Sheridan, LLP
- Agent Steven Versteeg
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; H01L43/08 ; H01L27/22

Abstract:
A magnetic memory cell and a method for implementing the magnetic memory cell for use in Solid-State Drives (SSDs) are provided. A magnetic memory cell includes a first conductor M1, and a second conductor M2 and a programmable area using unpatterned programmable magnetic media. At least one of the conductors M1, M2 is formed of a magnetic material, and the conductor M2 is more conductive than conductor M1. Steering of current is provided for programming the magnetic memory cell.
Public/Granted literature
- US20170062034A1 IMPLEMENTING ENHANCED MAGNETIC MEMORY CELL Public/Granted day:2017-03-02
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