Invention Grant
- Patent Title: Semiconductor device and semiconductor integrated circuit
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Application No.: US15800624Application Date: 2017-11-01
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Publication No.: US10157679B2Publication Date: 2018-12-18
- Inventor: Masayuki Kawae , Takafumi Noguchi , Atsuo Yoneyama
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Koutou-ku, Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Koutou-ku, Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2015-247356 20151218
- Main IPC: G11C16/30
- IPC: G11C16/30 ; G11C16/34 ; G11C16/26

Abstract:
A semiconductor device that can rapidly stabilize a control voltage for controlling an electric current source is provided. A semiconductor device includes a filter circuit that is provided between a control voltage generation circuit and an electric current source and removes noise of the control voltage. The filter circuit includes a first resistive element that is provided between the control voltage generation circuit and an output node that outputs the control voltage, a first capacitive element that is provided between the output node and a first voltage, a second capacitive element that is coupled between the output node and the first voltage via a first switch element. The second capacitive element is coupled between the first voltage and a second voltage when the first switch element is non-conductive. The second capacitive element is coupled with the first capacitive element through the output node when the first switch element is conductive.
Public/Granted literature
- US20180090215A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2018-03-29
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